Datasheet4U Logo Datasheet4U.com

SKI10123 - N-channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 66 A.
  • RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A).
  • Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

📥 Download Datasheet

Datasheet Details

Part number SKI10123
Manufacturer Sanken
File Size 591.64 KB
Description N-channel Trench Power MOSFET
Datasheet download datasheet SKI10123 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SKI10123 N-Channel MOSFET INCHANGE
SKI10195 N-Channel MOSFET INCHANGE
SKI10297 N-Channel MOSFET INCHANGE
SKI-FF530 Infrared emitting diode which mounted high power 850 nm IR CHIP ETC
SKI03021 N-Channel MOSFET INCHANGE

Other Datasheets by Sanken

Part Number Description
SKI10195 N-channel Trench Power MOSFET
SKI10297 N-channel Trench Power MOSFET
SKI03021 N-channel Trench Power MOSFET
SKI03036 N-channel Trench Power MOSFET
SKI03063 N-channel Trench Power MOSFET

Full PDF Text Transcription

Click to expand full text
100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
Published: |