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SKI06106 - N-channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 57 A.
  • RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A).
  • Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

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Datasheet Details

Part number SKI06106
Manufacturer Sanken
File Size 594.49 KB
Description N-channel Trench Power MOSFET
Datasheet download datasheet SKI06106 Datasheet

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Full PDF Text Transcription

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60 V, 57 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 57 A  RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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