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SKI04033 - N-channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 80 A.
  • RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A).
  • Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

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Datasheet Details

Part number SKI04033
Manufacturer Sanken
File Size 591.90 KB
Description N-channel Trench Power MOSFET
Datasheet download datasheet SKI04033 Datasheet

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Full PDF Text Transcription

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40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)  Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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