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Surface-mount MOS FET Array SDK08
(Ta=25ºC) Unit V V A A W 4 (Tc=25ºC, 4 circuits operate) 80 mJ ºC 150 ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg Ratings 50 ± 20 ± 4.5 ±9
Absolute Maximum Ratings
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = ± 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V min 50 ± 100 100 2.3 13.0 0.08 0.1 Ratings typ max
(Ta=25ºC) Unit V nA µA V S Ω Ω pF pF pF ns ns ns ns V
External Dimensions SMD-16A
1.0± 0.3
0.