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Darlington
2SD2082
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2082 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V
16.2
Equivalent circuit
B
C
(2k Ω) (100 Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2082 120 120 6 16(Pulse26) 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
23.0±0.3
V
9.5±0.2
mA
a b
MHz pF
1.75 2.15 1.05 5.45±0.1 1.5 4.
2SD2082 Datasheet
