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DS120020H2 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 25 A QC 102 nC TO-247-2L Marking DS120020H2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitiv

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Datasheet Details

Part number DS120020H2
Manufacturer Sanan
File Size 303.52 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120020H2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet SDS120J020H2 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Device SDS120J020H2 Package TO-247-2L Product Description VRRM 1200 V IF(135℃) 25 A QC 102 nC TO-247-2L Marking DS120020H2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1