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K9W8G16U1M - Nand Flash Memory

General Description

Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)bit x8bit -X16 device(K9XXG16XXM): (1K + 32)bit x16bit - Cache Register -X8 device(K9XXG08XXM) : (2K + 64)bit x8bit -X16 device(K9XXG16XXM) : (1K + 32)bit x16bit.
  • Automatic Program and Erase -.

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Full PDF Text Transcription for K9W8G16U1M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9W8G16U1M. For precise diagrams, and layout, please refer to the original PDF.

K9W8G08U1M K9K4G08Q0M K9K4G16Q0M K9K4G08U0M K9K4G16U0M www.DataSheet4U.com FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Rev...

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le 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID read command is don’ t cared. The 5th Byte ID after 90h ID read command is deleted. 1. The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 3. Pb-free Package is added. K9K4G08Q0M-PCB0,PIB0 K9K4G08U0M-PCB0,PIB0 K9K4G16U0M-PCB0,PIB0 K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0,PIB0 1. Added Addressing method for program o

More Datasheets from Samsung Semiconductor

Part Number Description
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W4G08U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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