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K9F6408U0B-TCB0 - 8M x 8 Bit NAND Flash Memory

General Description

The K9F6408U0B is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.

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Full PDF Text Transcription for K9F6408U0B-TCB0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9F6408U0B-TCB0. For precise diagrams, and layout, please refer to the original PDF.

K9F6408U0B-TCB0, K9F6408U0B-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. 1. Changed endurance : ...

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istory Revision No. History 0.0 Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles Draft Date July 17th 2000 0.1 1. Changed don’t care mode in address cycles - *X can be "High" or "Low" => *L must be set to "Low" Nov. 20th 2000 2. Explain how pointer operation works in detail. 3. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare area. When SE is high, the spare area is not accessible for reading or programming. SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading or programming.

More Datasheets from Samsung Semiconductor

Part Number Description
K9F6408U0B-TIB0 8M x 8 Bit NAND Flash Memory
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K9F1G08Q0M-YCB0 1Gb 1.8V NAND Flash Errata
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