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K4T1G044QM - 1Gb M-die DDR2 SDRAM Specification

General Description

3.

4.

Rev.1.1 Jan.

Key Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 8 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length: 4 , 8(Interleav.

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Full PDF Text Transcription for K4T1G044QM (Reference)

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1Gb M-die DDR2 SDRAM DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.1 January 2005 Page 1 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ord...

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f 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev.1.1 Jan. 2005 1Gb M-die DDR2 SDRAM 0. Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-533 4-4-4 K4T1G044QM-ZCD5 K4T1G084QM-ZCD5 K4T1G164QM-ZCD5 DDR2-400 3-3-3 K4T1G044QM-ZCCC K4T1G084QM-ZCCC K4T1G164QM-ZCCC DDR2 SDRAM Package Lead-Free Lead-Free Lead-Free Note : Speed bin is

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