K4M563233D - 8Mx32 Mobile SDRAM 90FBGA

Product Overview

Samsung

Datasheet Details

Part number	K4M563233D
Manufacturer	Samsung
File Size	65.02 KB
Description	8Mx32 Mobile SDRAM 90FBGA
Datasheet	K4M563233D Datasheet
Additional preview pages of the K4M563233D datasheet.

Product details

Description

The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).

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Published: Apr 25, 2005 |