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K4M563233D - 8Mx32 Mobile SDRAM 90FBGA

General Description

The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle).

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Full PDF Text Transcription for K4M563233D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4M563233D. For precise diagrams, and layout, please refer to the original PDF.

K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M563233D-M(E)E/N/I/P 2M x 32...

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on 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M563233D-M(E)E/N/I/P 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply • LVCMOS compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle). • Extended Temperature Operation (-25 °C ~ 85° C). • Inderstrial Temperature Operation (-40 °C

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