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K4F660811B - 8M x 8bit CMOS Dynamic RAM

General Description

This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Full PDF Text Transcription for K4F660811B (Reference)

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K4F660811B,K4F640811B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode...

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family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4F660811B-JC(5.0V, 8K Ref.) - K4F640811B-JC(5.0V, 4K Ref.) - K4

More Datasheets from Samsung Semiconductor

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