Datasheet Details
| Part number | S8S3122X16 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.14 MB |
| Description | 256K x 16 SDRAM |
| Datasheet |
 S8S3122X16 Datasheet
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Description
The S8S3122X16 is 4,194,304 bits synchronous high data rate Dynamic RAM organized as 2 x131,072 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Features
- 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (1K/16ms) CMOS SDRAM.