KM416RD8AS - 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM416RD8AS
Manufacturer	Samsung semiconductor
File Size	3.74 MB
Description	128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
Datasheet	KM416RD8AS Datasheet
Additional preview pages of the KM416RD8AS datasheet.

Product details

Description

Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Target Direct RDRAM™ Serial input/output.Pins for reading from and writing to the control registers using a serial access protocol.Also used for power management.Command input.Pins used in conjunction with SIO0 and SIO1 for reading from and writing to the control registers.Also used for power management.Serial clock input.Clock source used for reading from and writing to the control registers Supply voltage for the RDRAM core a

Features

for mobile, graphics and large memory systems include power management, byte masking. Target Direct RDRAM™ KM4 xx RD8AC SEC KOREA SEC KOREA KM416RD8AS-RK80 Figure 1: Direct RDRAM Consumer CSP Package Key Timing Parameters/Part Numbers Speed Organization Binning 256Kx16x32sa -RM80 -SM80 I/O Freq. MHz 800 800 trac (Row Access Time) ns 40 40 Part Number Features.
Highest sustained bandwidth per DRAM device KM416RD8AS-R bM80 KM416RD8AS-ScM80 - 1.6GB/s sustained data transfer rate -.

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Other Datasheets by Samsung semiconductor

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Published: Apr 4, 2005 |