Datasheet Details
| Part number | K9WAG08U1M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.22 MB |
| Description | (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| Datasheet |
 K9WAG08U1M Datasheet
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General Description
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
Its NAND cell provides the most costeffective solution for the solid state application market.
Key Features
- Voltage Supply - 2.70V ~ 3.60V.
- Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
- K9NBG08U5M : 50ns(Min. ).
- Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
- Command.
