Download the K9K2G08U0A datasheet PDF.
This datasheet also covers the K9K2G08R0A variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
of Copy-back program is changed 4.
TSOP package is deleted 1.
CE access time : 23ns->35ns (p.9) 1.
Key Features
Voltage Supply - 2.7 V ~3.6 V - 1.65V ~ 1.95V.
Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte.
Page Read Operation - Page Size - 2K-Byte - Random Read : 25µs(Max. ) - Serial Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 300µs(Typ. ) - Block Erase Time : 2ms(Typ. ).
Note: The manufacturer provides a single datasheet file (K9K2G08R0A_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K9K2G08U0A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K9K2G08U0A. For precise diagrams, and layout, please refer to the original PDF.
K9K2G08U0A K9K2G08R0A FLASH MEMORY www.DataSheet4U.com K9K2G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHO...
View more extracted text
OVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
K9K2G08U0A Datasheet
