Datasheet Details
| Part number | K9HCG08U1D |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.68 MB |
| Description | 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory |
| Datasheet |
 K9HCG08U1D Datasheet
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General Description
Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit.
The device is offered in 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
Key Features
- Voltage Supply - 3.3V Device : 2.7V ~ 3.6V.
- Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
- Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
- Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
- K9XDG08U5D: 50ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time - Program time : 800µs(.
