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K9F2G08Q0M - FLASH MEMORY

General Description

Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity.

The device is offered in 1.8V or 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Key Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.

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Full PDF Text Transcription for K9F2G08Q0M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9F2G08Q0M. For precise diagrams, and layout, please refer to the original PDF.

K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document T...

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YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added.

More Datasheets from Samsung Semiconductor

Part Number Description
K9F2G08U0M FLASH MEMORY
K9F2G16Q0M FLASH MEMORY
K9F2G16U0M FLASH MEMORY
K9F2808Q0B 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-D 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0C 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
K9F2808Q0C-DCB0 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory