K9F2808U0C-DCB0 - 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
Samsung Semiconductor
Download the K9F2808U0C-DCB0 datasheet PDF.
This datasheet also covers the K9F variant, as both devices belong to the same 16m x 8 bit / 8m x 16 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity.
The device is offered in 1.8V or 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.
Key Features
and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.
Full PDF Text Transcription for K9F2808U0C-DCB0 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K9F2808U0C-DCB0. For precise diagrams, and layout, please refer to the original PDF.
YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added.
K9F2808U0C-DCB0 Datasheet
