Datasheet4U Logo Datasheet4U.com

K9F1208U0M-YCB0 - 64M x 8 Bit NAND Flash Memory

Download the K9F1208U0M-YCB0 datasheet PDF. This datasheet also covers the K9F variant, as both devices belong to the same 64m x 8 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply : 2.7V~3.6V.
  • Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit multipled by four planes.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte.
  • 528-Byte Page Read Operation - Random Access : 12µs(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 200µs(Typ. ) - Block Erase Time : 2ms(Typ. ).
  • Command/Address/Data Mul.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9F-1208U0.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K9F1208U0M-YCB0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9F1208U0M-YCB0. For precise diagrams, and layout, please refer to the original PDF.

K9F1208U0M-YCB0, K9F1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH MEMORY History 1. Initial issue Draft Date Oct. 27th ...

View more extracted text
ion No 0.0 FLASH MEMORY History 1. Initial issue Draft Date Oct. 27th 2000 Remark Advanced Information 0.1 1. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare area. When SE is high, the spare area is not accessible for reading or programming. SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading or programming. => Connect this input pin to GND or set to static low state unless the sequential read mode excluding spare area is used. 2. Updated operation for tRST timing - If reset command(FFh) is written at Ready state, the device goes into

More Datasheets from Samsung Semiconductor

Part Number Description
K9F1208U0M-YIB0 64M x 8 Bit NAND Flash Memory
K9F1208U0M- 64M x 8 Bit NAND Flash Memory
K9F1208U0 64M x 8 Bit NAND Flash Memory
K9F1208U0A NAND Flash Memory
K9F1208U0B 64M x 8 Bit NAND Flash Memory
K9F1208U0B 64M x 8 Bit NAND Flash Memory
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0C FLASH MEMORY