Download the K9F1208R0B datasheet PDF.
This datasheet also covers the K9F1208B0B variant, as both devices belong to the same 64m x 8 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.
The device is offered in 1.8V, 2.7V, 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.
Key Features
and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.
Note: The manufacturer provides a single datasheet file (K9F1208B0B_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K9F1208R0B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K9F1208R0B. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 I...
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Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3. Vcc range is changed -2.4V~2.9V -> 2.5V~2.9V -1.7V~1.95V ->1.65V~1.95V 4. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Draft Date Apr. 24th 2004 Oct. 11th.2004 Remark Advance Preliminary Note : For more detailed features and specifications including FAQ, please refer to Sa
K9F1208R0B Datasheet
