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K7N403601M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Download the K7N403601M datasheet PDF. This datasheet also covers the K7N401801M variant, as both devices belong to the same (k7n401801m / k7n403601m) 128kx36 & 256kx18 pipelined ntram-tm family and are provided as variant models within a single manufacturer datasheet.

General Description

The K7N403601M and K7N401801M are 4,718,592 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Key Features

  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • Α interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K7N401801M_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K7N403601M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K7N403601M. For precise diagrams, and layout, please refer to the original PDF.

K7N403601M K7N401801M www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 Hi...

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& 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release. Remove VDDQ Supply voltage( 2.5V I/O ) Add VDDQ Supply voltage( 2.5V I/O ) Draft Date July.06. 1998 Oct. 10 . 1998 Remark Preliminary Preliminary 0.2 0.3 1.0 2.0 3.0 Dec. 10. 1998 Dec. 23. 1998 Jan. 29. 1999 Feb. 25. 1999 May. 13.

More Datasheets from Samsung Semiconductor

Part Number Description
K7N403601A (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601B (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N403609B (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N401801A (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N401801B (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N401801M (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
K7N401809B (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N161801A 512K x 36 & 1M x 18 Pipelined NtRAM
K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAM
K7N161845A 512K x 36/32 & 1M x 18 Pipelined NtRAM