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K6R1016V1D - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Download the K6R1016V1D datasheet PDF. This datasheet also covers the K6R-1016V variant, as both devices belong to the same 64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges. family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 8,10ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R1016V1D- 08: 80mA(Max. ) K6R1016V1D-10: 65mA(Max. ).
  • Single 3.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.
  • Data Byte Control: LB: I/O1~ I/O 8, UB: I/O9~ I/O16.
  • Standard Pin Configuration.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6R-1016V-1D.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number K6R1016V1D
Manufacturer Samsung Semiconductor
File Size 259.83 KB
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Datasheet download datasheet K6R1016V1D Datasheet

Full PDF Text Transcription for K6R1016V1D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6R1016V1D. For precise diagrams, and layout, please refer to the original PDF.

K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. for AT&T CMOS SRAM Revision Hist...

View more extracted text
al and Industrial Temperature Ranges. for AT&T CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. Speed bin modify Current modify 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous 8ns 100mA ICC(Industrial) 10ns 85mA 1. Add tBA,tBLZ,tBHZ,tBW AC parematers. 1. Correct read cycle timing diagram(2). Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Current 90mA 75mA February. 14. 2002 June. 19. 2002 Final Final Remark Preliminary Preliminary Preliminary Final Rev. 2.0 Rev. 3.0 The attached data sheets are prepared and approved b

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