Datasheet4U Logo Datasheet4U.com

K4S643233H-FHL - Mobile-SDRAM

Download the K4S643233H-FHL datasheet PDF. This datasheet also covers the K4S643233H-FE variant, as both devices belong to the same mobile-sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S643233H-FE_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S643233H-FHL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S643233H-FHL. For precise diagrams, and layout, please refer to the original PDF.

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks...

View more extracted text
wer supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C).

More Datasheets from Samsung Semiconductor

Part Number Description
K4S643233H-FHC Mobile-SDRAM
K4S643233H-FHE Mobile-SDRAM
K4S643233H-FHG Mobile-SDRAM
K4S643233H-FHN Mobile-SDRAM
K4S643233H-FC Mobile-SDRAM
K4S643233H-FE Mobile-SDRAM
K4S643233H-FF Mobile-SDRAM
K4S643233H-FG Mobile-SDRAM
K4S643233H-FL Mobile-SDRAM
K4S643233H-FN Mobile-SDRAM