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K4S641632H-UCL60 - 64Mb H-die SDRAM Specification 54 TSOP-II

Download the K4S641632H-UCL60 datasheet PDF. This datasheet also covers the K4S641632H-UC60 variant, as both devices belong to the same 64mb h-die sdram specification 54 tsop-ii family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms r.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S641632H-UC60_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S641632H-UCL60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S641632H-UCL60. For precise diagrams, and layout, please refer to the original PDF.

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves ...

View more extracted text
HS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 1.0 (September, 2003) • Finalized CMOS SDRAM Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) • Added Note 5. sentense of tRDL parameter Revision 1.3 (August, 2004) • Corrected typo. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S641632H-UCL60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UCL75 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC70 64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC75 64Mb H-die SDRAM Specification 54 TSOP-II