Datasheet4U Logo Datasheet4U.com

K4S283233F-F75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Download the K4S283233F-F75 datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 1m x 32bit x 4 banks mobile sdram in 90fbga family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-2832.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S283233F-F75 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S283233F-F75. For precise diagrams, and layout, please refer to the original PDF.

K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks o...

View more extracted text
r supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). E

More Datasheets from Samsung Semiconductor

Part Number Description
K4S283233F-F1H 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F1L 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F60 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FE 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FHE 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-C 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-G 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-L 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-N 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA