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K4S281632D-NC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Download the K4S281632D-NC1H datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-28163.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S281632D-NC1H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S281632D-NC1H. For precise diagrams, and layout, please refer to the original PDF.

K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specifi...

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* Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D Revision History Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. Rev. 0.1 Sept. 2001 K4S281632D 2M x 16Bit x

More Datasheets from Samsung Semiconductor

Part Number Description
K4S281632D-NC60 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NC75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NC7C 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NL1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NL60 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NL75 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-NL7C 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-L1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-L1L 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D-L55 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL