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K4S280832F-UC75 - 128Mb F-die SDRAM

Download the K4S280832F-UC75 datasheet PDF. This datasheet also covers the K4S281632F-Uxx variant, as both devices belong to the same 128mb f-die sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S281632F-Uxx_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S280832F-UC75 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S280832F-UC75. For precise diagrams, and layout, please refer to the original PDF.

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww August 2004 heet4U.co...

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-Free e(RoHS compliant) w.DataSheRevision 1.2 ww August 2004 heet4U.com* Samsung Electronics reserves the right to change products or specification without notice. www.DataSRev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) • Corrected typo. CMOS SDRAM Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S280832F-UL75 128Mb F-die SDRAM
K4S280832F-TC75 128Mb F-die SDRAM Specification
K4S280832F-TL75 128Mb F-die SDRAM Specification
K4S280832A 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832C 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832E-TC75 128Mb E-die SDRAM Specification
K4S280832E-TL75 128Mb E-die SDRAM Specification
K4S280832I JEDEC standard 3.3V power supply LVTTL compatible
K4S280832K 128Mb K-die SDRAM Specification
K4S280832M 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL