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K7D163674B - 512Kx36 & 1Mx18 SRAM

Download the K7D163674B datasheet PDF. This datasheet also covers the K7D161874B variant, as both devices belong to the same 512kx36 & 1mx18 sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices.

They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung's advanced CMOS technology.

Key Features

  • 512Kx36 or 1Mx18 Organizations. 1.8~2.5V VDD/1.5V VDDQ. (1.9V max VDDQ) HSTL Input and Outputs. Single Differential HSTL Clock. Synchronous Pipeline Mode of Operation with Self-Timed Late Write.
  • Free Running Active High and Active Low Echo Clock Output Pin.
  • Asynchronous Output Enable.
  • www. DataSheet4U. com 512Kx36 & 1Mx18 SRAM.
  • Registered Addresses, Burst Control and Data Inputs.
  • Registered Outputs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K7D161874B_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K7D163674B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K7D163674B. For precise diagrams, and layout, please refer to the original PDF.

K7D163674B K7D161874B Document Title 16M DDR SYNCHRONOUS SRAM www.DataSheet4U.com 512Kx36 & 1Mx18 SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial document...

View more extracted text
AM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial document. Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items. Change DC CHARACTERISTICS (Stop Clock Standby Current) -ISB1 : 100 -> 150 Change JTAG Instruction Cording - For Reserved Change DC CHARACTERISTICS (Increase Operating Current) - x36 : add 40mA, x18 : add 60mA Add DC CHARACTERISTICS - VIN-CLK, VDIF-CLK, VCM-CLK Add AC INPUT CHARACTERISTICS Add INPUT DEFINITION Draft Data Oct. 2003 Nov. 2003 Remark Advance Preliminary Rev. 0.2 Feb. 2004 Preliminary Rev. 0.3 Feb. 2004 Preliminary Rev. 1.0 Mar. 2004 Final Rev

More Datasheets from Samsung Semiconductor

Part Number Description
K7D161874B 512Kx36 & 1Mx18 SRAM
K7D321874A 32Mb A-die DDR SRAM
K7D321874C 1Mx36 & 2Mx18 SRAM
K7D323674A 32Mb A-die DDR SRAM
K7D323674C 1Mx36 & 2Mx18 SRAM