STB416D
Green Product
Ver 1.0
S a m Hop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
40V
PRODUCT SUMMARY (P-Channel)
V DSS
-40V
18A
R DS(ON) (m Ω) Max
28 43 @ VGS=10V
-16A
R DS(ON) (m Ω) Max
36 @ VGS=-10V 61 @ VGS=-4.5V
@ VGS=4.5V
D1
D1/D2
D2
G1
S1 G1 D1/D2 S2 G2
G2
STB SERIES TO-263 5L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Symbol N-Channel P-Channel VDS Drain-Source Voltage -40 40 VGS Gate-Source Voltage ±20 ±20 TC=25°C -16 18 a ID Drain Current-Continuous TC=70°C 14.4 -12.8 b IDM -40 40 -Pulsed d 36 64 EAS Sigle Pulse Avalanche Energy PD TJ, TSTG Maximum Power Dissipation a
Units V V A A A m J W W °C
TC=25°C TC=70°C
15.6 10 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
8 80
°C/W °C/W
May,11,2010...
