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S DM4953
S amHop Microelectronics C orp.
Augus t , 2002
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S -30V
ID -4.9A
R DS (ON) ( m W ) TYP
43 @ VGS = -10V 70 @ VGS = - 4.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S urface Mount P ackage.
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300us Pulse Width)
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
S ymbol VDS VGS ID IDM IS PD
TJ, TSTG
Limit -30 20 4.9 30 1.
SDM4953 Datasheet
