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STS3411AGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.6A
52 @ VGS=-10V 65 @ VGS=-4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
S OT-23
D S
G
D G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous a c IDM -Pulsed c
TA=25°C TA=70°C
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit -30 ±20 -3.6 -2.9 -21 1.25 0.
STS3411A Datasheet
