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S T M8501
S amHop Microelectronics C orp.
J an.10 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
55V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-55V
ID
5A
R DS (ON) ( m W )
Max
ID
- 3.5A
R DS (ON) ( m W )
80
Max
50 @ V G S = 10V 70 @ V G S = 4.5V
D1
8
@ V G S = -10V
100 @ V G S = -4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol Vspike V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG
d
N-C hannel P-C hannel 60 55 20 5 4.2 22 1.7 2 1.44 -55 to 150 -60 -55 20 - 3.5 - 2.8 - 18 -1.
STM8501 Datasheet
