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STD666S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK).

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Datasheet Details

Part number STD666S
Manufacturer SamHop Microelectronics
File Size 120.44 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD666S Datasheet

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Full PDF Text Transcription

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Green Product STU666S STD666S Ver 1.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 6A RDS(ON) (mΩ) Max 101 @ VGS=10V 126 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 60 ±20 TC=25°C TC=70°C 6 4.
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