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STB520N - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S.

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Datasheet preview – STB520N

Datasheet Details

Part number STB520N
Manufacturer SamHop Microelectronics
File Size 105.92 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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STB520NGreen Product Sa mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 200V 22A 65 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C 200 ±20 22 18.4 IDM -Pulsed a c 64 EAS Single Pulse Avalanche Energy d 110 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.
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