• Part: SP8601
  • Description: Dual N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 93.60 KB
Download SP8601 Datasheet PDF
SamHop Microelectronics
SP8601
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.2 5.8 43 1.47 0.94 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient °C/W Details are subject to change without notice. Jul,18,2014 .samhop..tw Ver 2.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250u A VDS=16V , VGS=0V Min 20 Typ Max Units V u A u A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON...