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SPP9972 - P-Channel MOSFET

Description

The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • -60V/-18A,RDS(ON)=25mΩ@VGS=-10V.
  • -60V/-12A,RDS(ON)=33mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP9972
Manufacturer SYNC POWER
File Size 475.92 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP9972 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP9972 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -60V/-18A,RDS(ON)=25mΩ@VGS=-10V  -60V/-12A,RDS(ON)=33mΩ@VGS=-4.
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