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SPP3481 - P-Channel MOSFET

Description

The SPP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ -30V/-5.2A,RDS(ON)= 55mΩ@VGS=- 10V ‹ -30V/-4.2A,RDS(ON)= 75mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TSOP-6P package design PIN.

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Datasheet Details

Part number SPP3481
Manufacturer SYNC POWER
File Size 189.86 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3481 Datasheet

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Full PDF Text Transcription

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SPP3481 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES ‹ -30V/-5.2A,RDS(ON)= 55mΩ@VGS=- 10V ‹ -30V/-4.2A,RDS(ON)= 75mΩ@VGS=-4.
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