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SPP3413W - P-Channel MOSFET

Description

The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V.
  • -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number SPP3413W
Manufacturer SYNC POWER
File Size 340.10 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3413W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP3413W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES  -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V  -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V  -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.
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