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SPN72T10A - N-Channel MOSFET

Description

The SPN72T10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 100V/63A,RDS(ON)=9.8mΩ@VGS=10V.
  • 100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-252-2L package design PIN.

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Datasheet preview – SPN72T10A

Datasheet Details

Part number SPN72T10A
Manufacturer SYNC POWER
File Size 280.82 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN72T10A Datasheet
Additional preview pages of the SPN72T10A datasheet.

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Full PDF Text Transcription

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SPN72T10A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN72T10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN72T10A has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  100V/63A,RDS(ON)=9.8mΩ@VGS=10V  100V/63A,RDS(ON)=13.0mΩ@VGS=4.
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