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SPN68T10 - N-Channel MOSFET

Description

The SPN68T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/68A,RDS(ON)=14mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L and TO-252-2L package design PIN.

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Datasheet Details

Part number SPN68T10
Manufacturer SYNC POWER
File Size 635.24 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN68T10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN68T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN68T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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