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SPN55T20 - N-Channel Enhancement Mode MOSFET

Description

The SPN55T20 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 200V/42A,RDS(ON)=32mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-252-2L/PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPN55T20
Manufacturer SYNC POWER
File Size 388.13 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN55T20 Datasheet

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Full PDF Text Transcription

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SPN55T20 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN55T20 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
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