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SPN4920A - N-Channel MOSFET

Description

The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design.

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Datasheet Details

Part number SPN4920A
Manufacturer SYNC POWER
File Size 265.87 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4920A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN4920A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.
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