Datasheet4U Logo Datasheet4U.com

SPN4860 - N-Channel MOSFET

Description

The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/20A,RDS(ON)=4.8mΩ@VGS=10V.
  • 60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN4860
Manufacturer SYNC POWER
File Size 488.52 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4860 Datasheet

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  UPS  Motor Control  Power Tool FEATURES  60V/20A,RDS(ON)=4.8mΩ@VGS=10V  60V/20A,RDS(ON)=6.3mΩ@VGS=4.
Published: |