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SPN4856 - N-Channel Enhancement Mode MOSFET

Description

The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 40V/8A,RDS(ON)=9mΩ@VGS=10V.
  • 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet Details

Part number SPN4856
Manufacturer SYNC POWER
File Size 333.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN4856 Datasheet
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SPN4856 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching is required. APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  Charger Adapter  LED Lighting FEATURES  40V/8A,RDS(ON)=9mΩ@VGS=10V  40V/4A,RDS(ON)=13.5mΩ@VGS=4.
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