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SPN3456 - N-Channel MOSFET

Description

The SPN3456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 30V/6.0A,RDS(ON)=40mΩ@VGS=10V.
  • 30V/5.0A,RDS(ON)=50mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPN3456
Manufacturer SYNC POWER
File Size 425.34 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3456 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN3456 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/6.0A,RDS(ON)=40mΩ@VGS=10V  30V/5.0A,RDS(ON)=50mΩ@VGS=4.
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