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SPN10T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN10T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS Powered System DC/DC Converter Load Switch
FEATURES 100V/5A,RDS(ON)=160mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L,TO-220F-3L package design
PIN CONFIGURATION
TO-220-3L
TO-220F-3L
PART MARKIN
2020/05/14 Ver.
SPN10T10 Datasheet
