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SPC4606 - N & P-Channel MOSFET

Description

The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 30V/4.0A,RDS(ON)=40mΩ@VGS=10V 30V/3.6A,RDS(ON)=50mΩ@VGS=4.5V.
  • P-Channel -30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V -30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK3x2.
  • 8L package design PIN.

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Datasheet Details

Part number SPC4606
Manufacturer SYNC POWER
File Size 0.99 MB
Description N & P-Channel MOSFET
Datasheet download datasheet SPC4606 Datasheet

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Full PDF Text Transcription

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SPC4606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES  N-Channel 30V/4.0A,RDS(ON)=40mΩ@VGS=10V 30V/3.6A,RDS(ON)=50mΩ@VGS=4.
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