SMP730 - 400V N-Channel Power MOSFET

Datasheet Summary

Features

6A,400V, RDS(on) =1.0 Ω@VGS=10V.
Low gate charge ( typical 13 nC).
Low Crss ( typical 7pF).
100% avalanche tested.
Fast switching.
Improved dv/dt capability.

SMP730 400V N-Channel Power MOSFET by SY Semiconductors - Datasheet Preview — Datasheet preview – SMP730

Datasheet Details

Part number	SMP730
Manufacturer	SY Semiconductors
File Size	364.45 KB
Description	400V N-Channel Power MOSFET
Datasheet	SMP730 Datasheet
Additional preview pages of the SMP730 datasheet.

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Features ◆6A,400V, RDS(on) =1.0 Ω@VGS=10V ◆Low gate charge ( typical 13 nC) ◆Low Crss ( typical 7pF) ◆100% avalanche tested ◆Fast switching ◆Improved dv/dt capability Application ◆Electronic Ballast ◆Active power factor correction ◆ Switching mode power supply SMP730 400V N-Channel Power MOSFET Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol VDSS VGS ID IDM PD Tj TSTG EAS IAR Drain-source Voltage Gate-source Voltage Parameters Continuous Drain Current Drain Current-Pulsed ① Power Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy② Avalanche Current① --TC=25°C --TC=100°C --(TC = 25°C) -- Derate above 25°C Value 400 ±30 6 3.6 24 75 0.6 150 -55-150 280 7.

Published: Apr 20, 2018 |