ELM5964-10F
FEATURES
- High Output Power: P1d B=40.5d Bm(Typ.)
- High Gain: G1d B=10.0d B(Typ.)
- High PAE: hadd=39%(Typ.)
- Broad Band: 5.9～6.4GHz
- Impedance Matched Zin/Zout = 50W
- Hermetically Sealed Package DESCRIPTION
The ELM5964-10F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50W system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C)
Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -55 to +125 175 Unit V V W o C o C
REMENDED OPERATING CONDITION (Case Temperature Tc=25 o C)
Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it ≦10 ≦27.0 ≧-5.8 Unit V m A m A
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C)
Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1d B G.C.P. Pow er Gain at 1d B...
