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W20NM50 - STW20NM50

General Description

le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout.

The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics.

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Other Datasheets by STMicroelectronics

Part Number Description
W20NM50FD STW20NM50FD
W20NB50 STW20NB50
W20NC50 STW20NC50
W20NK50Z N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES t(s) 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE uc CHARGE d LOW GATE INPUT RESISTANCE ro TIGHT PROCESS CONTROL AND HIGH P MANUFACTURING YIELDS te DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics.